Todos Technologies develops a variety of sensors, based on proprietary, patented technology of an IR [Infrared] sensor device invented by Prof Yael Nemirovsky and further enhanced and developed by a Technion based team in the Electrical Engineering Department.

 

The invention is a micro-fabricated transistor that serves as a ‘low capacity’ well-isolated receptor which heats up rapidly when hit by IR photons, thereby changing the electrical characteristics of the transistor, and detecting emissions from the IR-source object.

 

 The unique sensors, TMOS (Thermal) and GMOS (gas), are manufactured using a Standard Semiconductor process which is a combination of ‘off the shelf’ CMOS-SOI and MEMS process. These are relatively inexpensive and are commercially available from multiple suppliers.

 

These sensors provide unprecedented performance in two domains: The sensitivity is one order of magnitude (10X) higher than existing sensors, response time is proportionately faster, and power requirements are significantly lower, thereby extending battery life significantly; in addition, the standard manufacturing process yields an overall low-cost solution (about 5 to 10 times lower than existing alternatives).

 

Most of the patents are owned by the Technion institute.

 

These patents are licensed, exclusively to Todos Technologies for commercialization.